Product Overview
The ABB 5SHX2645L0004 is a high-power Integrated Gate-Commutated Thyristor (IGCT) module engineered by ABB Power Semiconductors for the most demanding medium and high-voltage power conversion applications. As the core switching element in ABB’s ACS6000 and ACS5000 medium-voltage drive families, the ABB 5SHX2645L0004 combines the high blocking voltage capability of traditional gate-turn-off thyristors (GTOs) with the fast, controlled switching performance of IGBTs, delivering exceptional power density and efficiency . This press-pack IGCT module is designed with a reverse-conducting (RC) structure, integrating a fast-recovery antiparallel diode that eliminates the need for external freewheeling diodes in most three-level inverter topologies .
The ABB 5SHX2645L0004 features a robust press-pack package that ensures reliable electrical and thermal contact through a precisely controlled clamping force of 25–30 kN between water-cooled heatsinks . This design enables efficient heat extraction essential for continuous high-power operation. The module is configured with an internal gate drive interface and requires fiber optic triggering from ABB’s 5SXE series gate drive units for safe and reliable turn-on and turn-off . Built with advanced silicon technology and optimized buffer layer structures, the ABB 5SHX2645L0004 achieves extremely low on-state voltage (≤2.8V typical) and reduced switching losses, delivering system efficiency improvements of approximately 40–50% compared to conventional power semiconductor devices .
Technical Specifications
| Parameter Name | Value |
|---|---|
| Product Model | 5SHX2645L0004 |
| Manufacturer | ABB Power Semiconductors |
| Related Order Numbers | 3BHL000389P0104, 3BHB003154R0101 |
| Product Type | IGCT Power Module (Reverse-Conducting) |
| Package Type | Press-Pack (Pressure-Contact) |
| Maximum Blocking Voltage (VDRM) | 4500 V |
| Continuous Forward Current (ITAV) | 2645 A |
| Repetitive Peak Reverse Voltage (VRRM) | 4500 V |
| On-State Voltage (VT) | ≤2.8 V (Typical 2.0V) |
| Surge Current (ITSM, 10ms) | 40000 A |
| Switching Frequency | Up to 2 kHz |
| Gate Trigger Voltage | 3.0 V |
| Gate Trigger Current | 200 mA |
| Operating Junction Temperature | -40°C to +125°C |
| Thermal Resistance (Rth(j-c)) | 0.012 °C/W |
| Clamping Force Requirement | 25–30 kN |
| Cooling Method | Deionized Water Cooling |
| Weight | 2.6 kg |
