ABB 5SHY4045L0001
. Product Name
ABB 5SHY4045L0001 IGCT (Integrated Gate-Commutated Thyristor) Module (also referred to as ABB 5SHY4045L0001 High-Power Semiconductor Switching Module, ABB 5SHY4045L0001 Medium & High-Voltage Thyristor Module)
2. Product Description
ABB 5SHY4045L0001 is a high-performance Integrated Gate-Commutated Thyristor (IGCT) module developed by ABB, engineered for medium and high-voltage power electronic applications requiring high power density, low dynamic loss and reliable switching performance. This module integrates advanced GTO (Gate Turn-Off Thyristor) structure, integrated gate hard-drive technology, buffer layer design and anode transparent emitter technology, combining the on-state characteristics of thyristors with the switching characteristics of transistors.
It features a built-in freewheeling diode with excellent dynamic performance on a single chip, achieving an organic combination of low on-state voltage drop, high blocking voltage of thyristors and stable switching characteristics of transistors. With its unique structural design, the module reduces dynamic loss by approximately 50% compared to traditional GTO devices, and can establish robust series connections in high-power applications, effectively reducing the number of devices required in high-voltage frequency converters. The module is widely used in medium and high-voltage power equipment ranging from 0.5 MVA to hundreds of MVA, including high-voltage frequency converters, soft starters, HVDC (High-Voltage Direct Current) transmission systems, FACTS (Flexible AC Transmission Systems) and renewable energy power generation (wind and solar power).
3. Product Parameters
| Parameter Category | Specific Specifications |
|---|---|
| Brand/Manufacturer | ABB Group |
| Product Model | 5SHY4045L0001 |
| Product Type | IGCT Module; High-Power Semiconductor Switching Module |
| Rated Voltage | 4500 V (blocking voltage) |
| Rated Current | 4000 A (on-state current) |
| Maximum Turn-off Current | 8000 A |
| Switching Frequency | 2 kHz (typical operating frequency) |
| Dynamic Loss Reduction | Approximately 50% compared to traditional GTO devices |
| Junction Temperature Range | -40°C to +125°C |
| Operating Temperature | -25°C to +70°C (module housing) |
| Storage Temperature | -40°C to +85°C |
| Humidity Resistance | 5% to 95% RH (non-condensin |
