TOSHIBA 2N3A8204-B

Product name: ** Toshiba 2N3A8204-B power transistor

Product Description:

Toshiba 2N3A8204-B power transistor is a NPN type, high voltage, low impedance, high current power transistor. The transistor is packaged in TO-220 and has the following features:

Maximum collector-emitter voltage: 1,200V
Maximum collector current: 100 A
Maximum base current: 50 mA
Typical on-resistance: 0.1Ω
Product parameters:

Maximum collector-emitter voltage: 1,200V
Maximum collector current: 100 A
Maximum base current: 50 mA
Typical on-resistance: 0.1Ω
Collector-emitter saturation voltage drop: 1.2V
Collector-emitter reverse voltage: 5 V
Base-emitter voltage: 6 V
Base-emitter saturation voltage drop: 0.7V
Output power: 120 W
Specifications:

Package: TO-220

Dimensions: 59.4 x 44.5 x 29.4 mm
Weight: 10 g
Application field:

Toshiba 2N3A8204-B power transistors are widely used in various electronic devices, such as power supplies, transformers, motors, switches, etc. It can be used for power amplification, transformer regulation, motor drive, switch control and so on.