LAM 839-101612-885
Product Name
LAM 839-101612-885 Plasma Etch Chamber Control Module (serves as a “precision regulator” in semiconductor plasma etching systems, specializing in controlling plasma parameters and process conditions during wafer etching. With high-precision control capabilities and robust compatibility, it ensures the accuracy and uniformity of semiconductor device patterns)
Product Description
The LAM 839-101612-885 module is a critical control component designed for LAM Research’s plasma etch systems, widely used in semiconductor manufacturing processes such as logic chip and memory device fabrication. In the plasma etching of 3nm and advanced node wafers, this module precisely regulates key process parameters including radio frequency (RF) power, chamber pressure, gas flow rates, and electrode temperature. By maintaining RF power stability within ±0.1% and pressure fluctuations below ±0.5mTorr, it ensures the etch rate uniformity across the wafer (≤1% variation) and critical dimension (CD) control accuracy (±0.5nm), which are essential for fabricating high-density integrated circuits.
