DS200IIBDG1A
GE DS200IIBDG1A Insulated Gate Bipolar Transistor (IGBT) Board, which is part of the Mark V series of GE’s turbine control and management system4.
Product Description
The DS200IIBDG1A is an IGBT gate driver board manufactured by General Electric4. It is designed for high – performance power control and switching in various applications, featuring high – voltage capability, low power consumption, and fast switching speed3. It has six opt – isolated IGBT gate driver circuits, with one for the upper and lower IGBTs of each output phase, and also includes current, voltage, and fault feedback circuits for each output phase4. The internal power supply on the board provides the voltages required for the IGBT gate circuit and the shunt – feedback voltage – controlled oscillator (VCO)4. Its three main functions for the driver are isolated current feedback, isolated motor terminal voltage, and protection of the gate drive of the power insulated gate bipolar transistor4. In addition, the board has 9 LED indicators that can provide the processing status of the board. The LEDs are visible from the inside of the circuit board cabinet and are red when lit3.
Product Parameters1
- Input Power: Receives 38 and 115 V AC (24 V DC) input power from the control power transformer (CPT).
- Output Voltage and Current: Provides +24 V DC and -24 V DC output voltages with rated currents of 3 A and 1 A respectively. The regulator on the board draws 15 V DC from the 24 V DC power supply, and each 15 V DC output can handle 0.8 A, of which 0.25 A is available for external loads. It also uses the +24 V DC power supply to generate a +5 V DC, 4 A output.
- VCO Output Frequency: The nominal output frequency of each VCO is 250 kHz, and the output frequency range is 0 to 500 kHz depending on the input voltage.
Product Specifications
- Physical Dimensions2: Approximately 220 mm × 350 mm × 25 mm.
- Mounting Method1: DIN – rail mounting.
- Weight5: About 1.36 kg (3 lbs).
