5SHY35L4520

5SHY35L4520

5SHY35L4520LAM 810-072687-120
LAM 810-102361R216
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5SHY35L4520

ABB 5SHY35L4520 IGBT Module (High-Power Insulated Gate Bipolar Transistor Power Unit)
Product Description
The 5SHY35L4520 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module manufactured by ABB, designed for medium- to high-power inverter and converter applications in industrial drives, renewable energy systems, and power distribution networks. Its core function is to switch high-voltage and high-current electrical power with fast response times, enabling efficient conversion between AC and DC power—critical for applications such as variable frequency drives (VFDs) in large motors, solar inverters, and uninterruptible power supplies (UPS). For example, in a 1MW industrial drive controlling a water pump, this module converts 690V AC line voltage to variable-frequency AC power, adjusting the pump speed to match flow demand and reducing energy consumption by up to 30% compared to fixed-speed systems.
5SHY35L4520
Constructed with a 2-level topology, the module integrates two IGBT chips and two free-wheeling diodes in a half-bridge configuration, capable of handling a collector-emitter voltage (VCE) of 1700V and a continuous collector current (IC) of 450A at a junction temperature (TJ) of 125°C. It features ABB’s advanced IGBT4 chip technology, which reduces conduction and switching losses (typical on-state voltage VCE(sat) = 1.8V at 450A, 25°C) and enables high switching frequencies (up to 16kHz), minimizing harmonic distortion in the output waveform (total harmonic distortion ≤5% for a 3-phase motor drive).
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