5SHX1445H0002 3BHL000387P0101

5SHX1445H0002 3BHL000387P0101

5SHX1445H0002 3BHL000387P0101ABB 3BHB045647R0001 GVC736CE101
NI PXIE-4145
NI PXIE-4145
MOTOROLA MVME5500-0163
MOTOROLA MVME5500-0161
GE IS420PUAAH1A
MOTOROLA MVME6100-0161
ABB CI871K01 3BSE056797R1
GE VMIVME-7698-345 350-017698-345 B
EMERSON MVME55006E-0163
ABB 5SHY4045L0001 3BHB018162R0001
AUTOMAX 57C552-1
GE DS200DCFBG1BJB
ABB SYN5302-0277
ABB PPD113B01-10-150000
HONEYWELL FC-QPP-0001

5SHX1445H0002 3BHL000387P0101

Product Name
ABB 5SHX1445H0002 IGBT Power Module
Product Description
The 5SHX1445H0002 is a high-performance IGBT (Insulated Gate Bipolar Transistor) power module developed by ABB, designed for medium-power industrial applications such as variable frequency drives, inverters, and power converters. It integrates IGBT chips and freewheeling diodes in a compact, rugged package, enabling efficient conversion between DC and AC power. This module is widely used in industries including renewable energy (solar inverters, wind turbine converters), industrial motor drives (pumps, fans), and traction systems (electric vehicles, locomotives), where it handles medium currents and voltages to control motor speed and power flow.
5SHX1445H0002 3BHL000387P0101
Its advanced IGBT technology ensures low conduction and switching losses, improving overall system efficiency. The module features a direct copper bond (DCB) substrate for enhanced thermal conductivity, allowing effective heat dissipation even under high load conditions. It includes built-in protection mechanisms such as overcurrent protection, short-circuit ruggedness, and temperature monitoring, safeguarding against fault conditions and extending operational lifespan. The compact design facilitates easy integration into power electronic systems, while its robust construction ensures reliable performance in harsh industrial environments with wide temperature variations and electromagnetic interference (EMI).
Product Parameters
  • Electrical Parameters:
  • Collector-Emitter Voltage (VCE): 1200 V
  • 5SHX1445H0002 3BHL000387P01011
  • Continuous Collector Current (IC): 140 A (at 25°C heatsink temperature)
  • Pulsed Collector Current (ICM): 280 A (10 ms pulse duration)
  • Gate-Emitter Voltage (VGE): ±20 V
  • Maximum Junction Temperature (TJ): 150°C
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