ABB S-113N 3BHB018008R0001

ABB S-113N 3BHB018008R0001

ABB S-113N 3BHB018008R0001ABB 3BHB009885R5231,PHASEMODULE S-093R
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H200, RTX4090, RTX5090
ABB PCS 6000 Wind
AMAT 0010-27983
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ABB S-093H 3BHB030478R0309
ABB S-123H 3BHB030479R0512
ABB UFC912A101 3BHE039426R0101
ABB 5SHY4045L0001 3BHB018162R0001
ABB S-113N 3BHB018008R0001
EMERSON A6370D 9199-00040
NVIDIA H100 PCIE
NVIDIA H800 PCIE
LAM 839-101612-885

ABB S-113N 3BHB018008R0001

Product Description:

The ABB S-113N (part number 3BHB018008R0001) is an Insulated Gate Bipolar Transistor (IGBT) module. IGBTs are semiconductor devices used for switching and controlling high electrical power. They combine the high current-carrying capability of bipolar transistors with the ease of control of MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). This module is designed for various high-power applications such as motor drives, power supplies, inverters, and welding machines, offering efficient and reliable power switching.

Key Characteristics:

ABB S-113N 3BHB018008R0001

  • IGBT Technology: Combines the advantages of MOSFETs and bipolar transistors.
  • High Current Capability: Designed to handle significant electrical currents.
  • Easy to Control: Requires relatively low power to drive the gate.
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