5SDF0860H0003
Product Name
5SDF0860H0003 is an ABB High-Voltage IGBT Power Module (also referred to as ABB 5SDF Series Insulated Gate Bipolar Transistor Module, Industrial Power Conversion Semiconductor Module), a core power electronic component designed for medium- to high-voltage, high-power industrial applications such as inverters, converters, and traction systems.
2. Product Description
The 5SDF0860H0003 module is a high-performance insulated gate bipolar transistor (IGBT) power module developed by ABB, a global leader in power electronics technology. As a key component in power conversion systems, its core function is to switch and control high-voltage, high-current electrical energy with high efficiency and reliability, enabling seamless conversion between alternating current (AC) and direct current (DC) in industrial power equipment.
Featuring a rugged modular design optimized for high power density and thermal efficiency, the module integrates advanced Field-Stop (FS) IGBT chips and anti-parallel freewheeling diodes (FWD) with low on-state voltage drop and fast switching characteristics—minimizing energy loss and improving overall system efficiency. It adopts industrial-grade packaging with enhanced thermal management capabilities and electromagnetic interference (EMI) resistance, ensuring stable operation in harsh industrial environments with high temperatures, vibration, and electrical stress.
Seamlessly compatible with ABB power converters, inverters, and custom power electronic systems, the 5SDF0860H0003 module is widely used in renewable energy (wind/solar inverters), industrial drives, traction systems (electric vehicles, locomotives), power quality equipment (SVG/SVC), and medium-voltage industrial applications. It plays a critical role in enabling efficient, reliable power conversion for high-power industrial systems.
3. Product Parameters
| Parameter Category | Specific Specifications |
|---|---|
| Product Type | ABB High-Voltage IGBT Power Module (Half-Bridge Configuration) |
| Manufacturer | ABB Power Electronics |
| IGBT Chip Technology | Advanced Field-Stop (FS) IGBT Technology |
| Configuration | Half-Bridge (2 IGBT Chips + 2 Anti-Parallel Freewheeling Diodes) |
| Rated Voltage (VCE) | 6500V DC |
| Rated Current (IC) | 80A (Collector Current, Tc = 25℃) |
| Maximum Surge Current (ICS) | 480A (Single Pulse, Tc = 25℃) |
| On-State Voltage Drop (VCEsat) | Typ. 3.6V @ IC = 80A, Tc = 25℃; Max. 4.2V @ IC = 80A, Tc = 125℃ |
| Switching Frequency | Up to 10kHz (Continuous Operation) |
| Freewheeling Diode (FWD) | Anti-Parallel Silicon Diode (Standard) / Silicon Carbide (SiC) Diode (Optional) |
| Diode Forward Voltage (VF) | Typ. 3.0V @ IF = 80A, Tc = 25℃ |
| Thermal Resistance (Rth(j-c)) | Typ. 0.20 K/W (IGBT); Typ. 0.18 K/W (Diode) |
| Operating Junction Temperature (Tj) | -40℃ to +150℃ |
| Storage Temperature | -40℃ to +150℃ |
| Isolation Voltage (Viso) | ≥8000Vrms (Between Power Terminals and Base Plate) |
| Package Type | Press-Pack (Solderless) Package / Standard Power Module Package (ABB 5SDF Series Form Factor) |
| Dimensions (W×H×D) | 150mm × 130mm × 45mm (Typical, Subject to Package Variant) |
| Weight | Approximately 2.0kg (4.4 lbs) |
| Certifications | CE, UL, IEC 60747-9, RoHS |
| Protection Features | Overcurrent Protection (External Circuit Required), Overvoltage Clamping, Thermal Shutdown Capability |
4. Specifications
(1) Physical Specifications
- Mechanical Design: Modular press-pack or standard power module package with a rugged metal base plate for optimal thermal conductivity and mechanical stability. The design supports direct mounting to heat sinks or liquid cooling systems, ensuring efficient heat dissipation in high-power applications.
- Material & Packaging: High-temperature-resistant ceramic insulation and flame-retardant encapsulation materials (UL 94 V-0 rating) provide superior electrical insulation and protection against environmental contaminants. The solderless press-pack design eliminates solder fatigue issues, enhancing reliability under thermal cycling and vibration.
- Terminals & Connections: High-current power terminals (AC/DC Ports) with corrosion-resistant plating for secure electrical connections; low-voltage gate control terminals for precise switching control. The base plate is electrically isolated from power terminals to prevent ground loops and ensure operational safety.
(2) Functional Specifications
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Power Conversion Performance
- 6500V/80A rating enables high-voltage, high-current power switching, suitable for medium-voltage industrial applications (e.g., 3kV, 6kV, 10kV systems) such as medium-voltage inverters and converters.
- Advanced Field-Stop IGBT technology delivers low on-st
- ate losses and fast switching speeds (up to 10kHz), balancing efficiency and switching performance for power conversion systems.
- Anti-parallel freewheeling diodes (Si or SiC options) provide reverse current protection and improve commutation performance, reducing voltage spikes and EMI interference.
-
Thermal & Reliability Performance
- Low thermal resistance (Rth(j-c) = 0.20 K/W typ. for IGBT) ensures efficient heat transfer from the chip to the base plate, supporting continuous operation at high junction temperatures (+150℃ max.).
- Rugged packaging design withstands thermal cycling, vibration, and mechanical stress in industrial environments, complying with IEC 60068-2 standards for environmental testing (temperature, humidity, vibration).
- Solderless press-pack technology enhances long-term reliability, making the module suitable for mission-critical applications with extended operational lifespans.
-
System Integration & Compatibility
- Compatible with ABB medium-voltage inverters (e.g., ACS800 MV Series), converters, and custom power electronic systems. The module’s standard form factor supports easy replacement and scalability in existing systems.
- Requires external gate driver circuits (ABB recommended: 5SGD Series Gate Drivers) for precise switching control, overcurrent protection, and thermal monitoring.